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| e PTB 20101 175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor Description The 20101 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. It is rated at 175 watts P-sync minimum output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 28 Volt, 860 MHz Characteristics - Output Power = 175 Watts P-Sync - Output Power = 110 (CW) - Gain = 10.0 dB Min 55% Collector Efficiency at 110 Watts Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Gain vs. Frequency 13 12 (as measured in a broadband circuit) Gain (dB) 11 10 201 01 LOT COD E VCC = 28 V 9 8 400 ICQ = 2 x 200 mA Pout = 110 W 500 600 700 800 900 Frequency (MHz) Package 20224 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 65 4.0 20 330 1.89 -40 to +150 0.53 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20101 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Cob Min 25 55 3.5 20 -- Typ 30 70 5 50 85 Max -- -- -- 100 -- Units Volts Volts Volts -- pF Output Capacitance (per side) VCB = 28 V, IE = 0 A, f = 1 MHz RF Specifications (100% Tested) Characteristic Output Power (P-Sync) (VCC = 28 Vdc, ICQ = 200 mA per side, f = 860 MHz) Gain (VCC = 28 Vdc, Pout = 110 W, ICQ = 200 mA per side, f = 860 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 110 W, ICQ = 200 mA per side, f = 860 MHz) Load Mismatch Tolerance (VCC = 28 Vdc, Pout = 175 W, ICQ = 200 mA per side, f = 860 MHz--all phase angles at frequency of test) -- -- 5:1 -- Symbol Pout Gpe Min 175 10.0 Typ -- 11 Max -- -- Units Watts dB C 55 58 -- % Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 28 Vdc, Pout = 110 W, ICQ = 200 mA per side) Z Source Z Load Frequency MHz 450 550 650 750 850 R 0.4 0.5 0.7 1.8 2.7 Z Source jX -1.0 -1.3 -1.8 -2.0 -0.5 R 2.0 1.6 1.3 1.0 0.9 Z Load jX 0.3 0.0 0.0 -0.8 -1.2 2 9/28/98 e Typical Performance Efficiency vs. Frequency 60 58 PTB 20101 (as measured in a broadband circuit) Efficiency (%) 56 54 52 50 400 VCC = 28 V ICQ = 2 x 200 mA Pout = 110 W 500 600 700 800 900 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1994 EUS/KR 1301-PTB 20201 Uen Rev. D 09-28-98 3 |
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